BSS63LT1G ON Semiconductor, BSS63LT1G Datasheet - Page 8

• Manufacturer Part Number: BSS63LT1G
• Description: TRANS PNP 100V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS63LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 95MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 110V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 30
• Power Dissipation: 300mW
• Frequency (max): 95MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: - 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Maximum Operating Frequency: 95 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BSS63LT1G; BSS63LT1GOSTR

Product Bulletin #16134
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MMBZ5235BLT1G
MMBZ5236BLT1G
MMBZ5237BLT1G
MMBZ5238BLT1G
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MMBZ5240BLT1
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MMBZ5241BLT1G
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MMBZ5243BLT1G
MMBZ5244BLT1G
MMBZ5245BLT1
MMBZ5245BLT1G
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MMBZ5246BLT1G
MMBZ5246ELT1G
MMBZ5247BLT1G
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MMBZ5248BLT3G
MMBZ5248ELT1G
MMBZ5249BLT1
MMBZ5249BLT1G
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Issue Date: 11 Jul 2008
Rev.07-02-06
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