MMBTA14LT1G ON Semiconductor, MMBTA14LT1G Datasheet - Page 3

TRANS SS DARL NPN 30V SOT23

MMBTA14LT1G

Manufacturer Part Number
MMBTA14LT1G
Description
TRANS SS DARL NPN 30V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTA14LT1G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.3 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.3 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA14LT1GOS
MMBTA14LT1GOS
MMBTA14LT1GOSTR

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500
200
100
200
100
5.0
50
20
10
70
50
30
20
10
10
1.0
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
20
2.0
= 10 mA
Figure 4. Total Wideband Noise Voltage
100 mA
1.0 mA
50 100 200
5.0
Figure 2. Noise Voltage
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
500 1 k 2 k
20
BANDWIDTH = 1.0 Hz
R
S
≈ 0
50
I
C
= 1.0 mA
100
100 mA
5 k 10 k 20 k
200
NOISE CHARACTERISTICS
10 mA
(V
CE
http://onsemi.com
500
50 k 100 k
= 5.0 Vdc, T
1000
3
0.07
0.03
0.02
0.05
8.0
6.0
4.0
2.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
14
12
10
A
0
1.0
10 20
= 25°C)
I
C
2.0
= 1.0 mA
50 100 200
Figure 5. Wideband Noise Figure
5.0
Figure 3. Noise Current
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
100 mA
500 1 k 2 k
I
C
20
10 mA
100 mA
= 1.0 mA
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 1.0 Hz
10 mA
50
100
5 k 10 k 20 k
200
500
50 k 100 k
1000

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