MMBTA14LT1G ON Semiconductor, MMBTA14LT1G Datasheet - Page 4
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MMBTA14LT1G
Manufacturer Part Number
MMBTA14LT1G
Description
TRANS SS DARL NPN 30V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTA14LT1G.pdf
(6 pages)
Specifications of MMBTA14LT1G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.3 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.3 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA14LT1GOS
MMBTA14LT1GOS
MMBTA14LT1GOSTR
MMBTA14LT1GOS
MMBTA14LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA14LT1G
Manufacturer:
ON Semiconductor
Quantity:
19 150
Company:
Part Number:
MMBTA14LT1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MMBTA14LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
200 k
100 k
7.0 k
5.0 k
3.0 k
2.0 k
70 k
50 k
30 k
20 k
10 k
7.0
5.0
3.0
2.0
1.6
1.4
1.0
0.8
0.6
1.2
20
10
0.04
5.0
5.0
T
7.0
J
V
T
7.0
= 125°C
BE(sat)
J
V
V
= 25°C
0.1
BE(on)
CE(sat)
10
@ I
10
25°C
@ V
0.2
- 55°C
@ I
C
Figure 8. DC Current Gain
Figure 10. “On” Voltages
/I
V
I
I
B
C
CE
C
C
R
Figure 6. Capacitance
20
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 1000
/I
, REVERSE VOLTAGE (VOLTS)
B
= 5.0 V
0.4
= 1000
20
30
30
1.0
50 70 100
50 70 100 200 300
2.0
SMALL−SIGNAL CHARACTERISTICS
4.0
V
CE
T
J
= 5.0 V
= 25°C
200 300
10
C
ibo
http://onsemi.com
20
C
obo
500
500
40
4
- 1.0
- 2.0
- 3.0
- 4.0
- 5.0
- 6.0
4.0
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
2.0
0.5
0.5
0.1 0.2
5.0 7.0 10
I
C
*R
q
V
f = 100 MHz
T
*APPLIES FOR I
VB
= 10 mA
J
CE
1.0
qVC
= 25°C
Figure 7. High Frequency Current Gain
Figure 9. Collector Saturation Region
FOR V
= 5.0 V
Figure 11. Temperature Coefficients
FOR V
0.5 1.0 2.0
2.0
BE
CE(sat)
I
50 mA
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
20
C
0.5
I
/I
B
B
, BASE CURRENT (mA)
≤ h
30
5.0 10 20
FE
10
/3.0
250 mA
50 70 100
20
500 mA
50
50
25°C TO 125°C
- 55°C TO 25°C
25°C TO 125°C
- 55°C TO 25°C
100 200
100 200
200 300
T
J
= 25°C
500 1000
500
500