MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet - Page 2
MMBT5401LT1G
Manufacturer Part Number
MMBT5401LT1G
Description
TRANS SS PNP 150V HV SOT23
Manufacturer
ON Semiconductor
Type
High Voltager
Specifications of MMBT5401LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-500 mA
Current, Gain
50
Frequency
300 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-150 V
Voltage, Collector To Base
-160 V
Voltage, Collector To Emitter
-150 V
Voltage, Collector To Emitter, Saturation
-0.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5401LT1GOS
MMBT5401LT1GOS
MMBT5401LT1GOSTR
MMBT5401LT1GOS
MMBT5401LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
21 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
2 420
Part Number:
MMBT5401LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain — Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
= −10 mAdc, I
= −1.0 mAdc, I
= −100 mAdc, I
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, V
= −1.0 mAdc, V
= −200 mAdc, V
= −120 Vdc, I
= −120 Vdc, I
= −10 Vdc, I
C
B
B
B
B
E
B
E
CE
CE
CE
= 0)
E
E
CE
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0, T
= 0)
= −5.0 Vdc)
= −5.0 Vdc)
= −10 Vdc, f = 100 MHz)
= −5.0 Vdc)
= −10 Vdc, f = 1.0 kHz)
= −5.0 Vdc, R
A
= 100°C)
Characteristic
S
= 10 W, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
h
CES
h
NF
f
obo
FE
T
fe
−150
−160
−5.0
Min
100
50
60
50
40
−
−
−
−
−
−
−
−
Max
−0.2
−0.5
−1.0
−1.0
−50
−50
240
300
200
6.0
8.0
−
−
−
−
−
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−