MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet - Page 4
MMBT5401LT1G
Manufacturer Part Number
MMBT5401LT1G
Description
TRANS SS PNP 150V HV SOT23
Manufacturer
ON Semiconductor
Type
High Voltager
Specifications of MMBT5401LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-500 mA
Current, Gain
50
Frequency
300 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-150 V
Voltage, Collector To Base
-160 V
Voltage, Collector To Emitter
-150 V
Voltage, Collector To Emitter, Saturation
-0.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5401LT1GOS
MMBT5401LT1GOS
MMBT5401LT1GOSTR
MMBT5401LT1GOS
MMBT5401LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
21 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
2 420
Part Number:
MMBT5401LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
10.2 V
t
DUTY CYCLE = 1.0%
r
V
, t
in
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
f
0.20
0.18
0.15
0.13
0.10
0.08
0.05
0.03
≤ 10 ns
0.0001
Figure 8. Switching Time Test Circuit
0
INPUT PULSE
Values Shown are for I
Figure 4. Collector Emitter Saturation Voltage
0.0001
Figure 6. Base Emitter Voltage vs. Collector
−55°C
150°C
V
25°C
10 ms
CE
= 10 V
I
C
/I
B
I
C
= 10
, COLLECTOR CURRENT (A)
I
C
V
vs. Collector Current
, COLLECTOR CURRENT (A)
0.001
in
0.25 mF
0.001
−55°C
150°C
25°C
V
C
BB
Current
+ 8.8 V
100
100
@ 10 mA
5.1 k
R
B
1N914
0.01
3.0 k
0.01
V
CC
-30 V
R
C
V
out
http://onsemi.com
0.1
0.1
4
-0.5
-1.0
-1.5
-2.0
-2.5
100
7.0
5.0
3.0
2.0
1.0
2.5
2.0
1.5
1.0
0.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
70
50
30
20
10
0
0.1
0.2
0.0001
Figure 5. Base Emitter Saturation Voltage vs.
0.3
I
0.2
C
/I
B
0.3
T
Figure 7. Temperature Coefficients
q
q
J
VC
VB
= 10
= - 55°C to 135°C
0.5
for V
for V
0.5
I
C
0.7
V
I
Figure 9. Capacitances
C
, COLLECTOR CURRENT (A)
BE(sat)
R
CE(sat)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
0.001
1.0
Collector Current
1.0
2.0
3.0
2.0
5.0
3.0
0.01
10
C
5.0
ibo
−55°C
150°C
25°C
20
7.0
T
30
J
C
10
= 25°C
obo
50
100
0.1
20