NST3904F3T5G ON Semiconductor, NST3904F3T5G Datasheet - Page 3

• Manufacturer Part Number: NST3904F3T5G
• Description: TRANSISTOR NPN 40V 0.2A SOT1123
• Manufacturer: ON Semiconductor

Specifications of NST3904F3T5G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 290mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 347 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NST3904F3T5G; NST3904F3T5GOSTR

1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001
0.0001
Figure 3. Base Emitter Saturation Voltage vs.
150°C
−55°C
I
25°C
C
/I
20 mA
B
= 10
Figure 5. Saturation Region
I
0.001
C
40 mA
, COLLECTOR CURRENT (A)
I
b
80 mA
Collector Current
, BASE CURRENT (A)
60 mA
0.001
3.0
2.5
2.0
1.5
1.0
0.5
0.01
I
C
0
= 100 mA
5.0
V
cb
0.1
Figure 7. Output Capacitance
, COLLECTOR BASE VOLTAGE (V)
http://onsemi.com
10
C
ob
0.01
1
15
3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
20
0.0001
0
150°C
−55°C
25°C
Figure 4. Base Emitter Turn−On Voltage vs.
V
0.5
CE
= 2.0 V
25
1.0
V
0.001
Figure 6. Input Capacitance
eb
I
C
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
1.5
30
Collector Current
C
ib
2.0
0.01
2.5
3.0
3.5
0.1
4.0
4.5
5.0
1