PBSS4160T,215 NXP Semiconductors, PBSS4160T,215 Datasheet - Page 3

• Manufacturer Part Number: PBSS4160T,215
• Description: TRANS NPN 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4343-2; 934057667215; PBSS4160T T/R; PBSS4160T T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
3. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width t
2004 May 12
handbook, halfpage
V
V
V
I
I
I
I
P
T
T
T
SYMBOL
C
CM
B
BM
stg
j
amb
CBO
CEO
EBO
tot
60 V, 1 A
NPN low V
(1) Device mounted with 1 cm
(2) Device mounted on standard footprint.
Fig.2
(mW)
P tot
500
400
300
200
100
0
0
Power derating curves.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
40
CEsat
(1)
(2)
PARAMETER
2
(BISS) transistor
collector tab.
80
120
T amb (°C)
MLE128
160
open emitter
open base
open collector
note 1
note 2
t = 1 ms or limited by T
t
T
T
T
p
amb
amb
amb
≤ 300 μs; δ ≤ 0.02
≤ 25 °C; note 1
≤ 25 °C; note 2
≤ 25 °C; notes 1 and 3
3
CONDITIONS
p
≤ 10 ms.
j(max)
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
2
collector mounting pad.
80
60
5
0.9
1
2
300
1
270
400
1.25
+150
150
+150
PBSS4160T
MAX.
Product data sheet
V
V
V
A
A
A
mA
A
mW
mW
W
°C
°C
°C
UNIT