BSP19AT1G ON Semiconductor, BSP19AT1G Datasheet - Page 3

• Manufacturer Part Number: BSP19AT1G
• Description: TRANS NPN 100MA 350V SOT223
• Manufacturer: ON Semiconductor

Specifications of BSP19AT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 800mW
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 100 mA
• Power Dissipation: 0.8 W
• Maximum Operating Frequency: 5 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Gain Bandwidth Product Ft: 70 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 350V
• Collector-base Voltage: 400V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 40
• Frequency (max): 70MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP19AT1GOSTR

10000
1000
1000
100
100
10
1.2
0.8
0.6
0.4
0.2
0.0001
10
1
0.0001
1
0
1
0.1
Figure 5. Current Gain - - Bandwidth Product
IC/IB = 10
T
f = 5.0 MHz
V
J
GS
= 25C
Figure 3. Base Saturation Voltage
= 10 V
0.001
I
T
I
I
Figure 1. DC Current Gain
T
C
T
C
C
J
, COLLECTOR CURRENT (A)
J
J
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (A)
= 125C
= --55C
= 25C
0.001
1
T
0.01
J
= -- 55C
T
J
= 25C
T
J
= 125C
0.01
10
0.1
V
CE
= 10 V
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100
1
1
3
100
1.2
0.8
0.6
0.4
0.2
1.2
0.8
0.6
0.4
0.2
10
0.0001
0.0001
1
0
1
1
0
0.1
V
IC/IB = 10
CE
Figure 2. Collector Saturation Voltage
= 10 V
I
I
C
Figure 4. Base ON Voltage
I
C
C
, COLLECTOR CURRENT (mA)
1
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
Figure 6. Capacitance
0.001
0.001
T
J
C
= -- 55C
C
10
IBO
OBO
T
J
= 25C
T
T
J
J
= 25C
= 125C
0.01
0.01
T
J
= 125C
100
T
T
f = 1.0 MHz
V
J
J
CE
= -- 55C
= 25C
= 10 V
1000
0.1
1