ZXTS1000E6TA Diodes Zetex, ZXTS1000E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXTS1000E6TA
• Description: TRANS PNP/DIODE SCHOTTKY SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXTS1000E6TA

• Transistor Type: PNP + Diode (Isolated)
• Current - Collector (ic) (max): 1.25A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 240mV @ 100mA, 1.25A
• Current - Collector Cutoff (max): 10nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 885mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: ZXTS1000E6TR

ISSUE 1 - NOVEMBER 2000
800
600
400
200
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
0
0
0
TRANSISTOR TYPICAL CHARACTERISTICS
1m
1m
1m
+100°C
+25°C
VCE=2V
+25°C
-55°C
I
I
I
10m
10m
10m
C
C
C
- Collector Current (A)
- Collector Current (A)
- Collector Current (A)
IC/IB=10
IC/IB=100
IC/IB=50
V
V
CE(sat)
BE(on)
h
FE
100m
100m
100m
v I
v I
v I
C
C
C
+100°C
+150°C
+25°C
-55°C
1
1
1
10
10
10
3
100m
10m
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
10
0
0
1
100m
1m
1m
IC/IB=50
IC/IB=50
V
CE
100ms
100µs
10ms
1ms
DC
1s
- Collector Emitter Voltage (V)
Safe Operating Area
I
I
10m
C
10m
C
- Collector Current (A)
- Collector Current (A)
+100°C
+150°C
+25°C
V
V
1
-55°C
CE(sat)
BE(sat)
ZXTS1000E6
100m
100m
v I
v I
10
C
C
+100°C
+150°C
+25°C
-55°C
1
1
100
10
10