ZXTS1000E6TA Diodes Zetex, ZXTS1000E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXTS1000E6TA
• Description: TRANS PNP/DIODE SCHOTTKY SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXTS1000E6TA

• Transistor Type: PNP + Diode (Isolated)
• Current - Collector (ic) (max): 1.25A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 240mV @ 100mA, 1.25A
• Current - Collector Cutoff (max): 10nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 885mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: ZXTS1000E6TR

ELECTRICAL CHARACTERISTICS (at T
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
*Measured under pulsed conditions.
ZXTS1000E6
TRANSISTOR ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
SYMBOL MIN.
V
V
V
I
I
I
V
V
V
h
f
C
t
t
V
V
I
C
t
CBO
EBO
CES
T
(on)
(off)
R
FE
rr
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
(BR)R
F
D
amb
40
-12
-12
-5
300
300
200
125
75
30
= 25°C unless otherwise stated).
4
60
270
300
370
425
550
640
810
15
20
10
TYP.
-25
-55
-110
-160
-185
-990
-850
490
450
340
250
140
80
220
15
50
135
300
350
460
550
670
780
1050
40
MAX.
-10
-10
-10
-40
-100
-175
-215
-240
-1100
-1000
V
mV
mV
mV
mV
mV
mV
mV
pF
ns
A
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
ISSUE 1 - NOVEMBER 2000
I
I
I
I
I
I
I
I
V
f=1MHz,V
switched from
I
Measured at I
F
R
F
F
F
F
F
F
F
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f= 100MHz
V
I
R
=50mA*
=100mA*
=250mA*
=500mA*
=750mA*
=1000mA*
=1500mA*
=200µA
= 500mA to I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
V
B1
=30V
CB
EB
CES =-10V
CB
= -100 A
= -1.25A, I
= -100 A
= -10mA*
= -0.1A, I
= -0.25A, I
= -0.5A, I
= -1A, I
= -1.25A, I
= -1.25A, V
= -10mA, V
= -0.1A, V
= -0.5A, V
= -1.25A, V
= -2A, V
= -3A, V
= -50mA, V
CC
=I
=-4V
=-10V
= -10V, f=1MHz
= -10V, I
B2
=-100mA
R
B
=30V
CE
CE
= -50mA*
B
B
R
B
CE
CE
= -10mA*
=-10 mA*
= -2V*
= -2V*
B
B
R
= -100mA*
C
CE
CE
= 50mA
CE
CE
=-10 mA*
= -100mA*
= -2V*
= -2V*
=-1A
= 500mA
= 2V*
=-2V*
=-2V*
=-10 V