PMBT2907A,215 NXP Semiconductors, PMBT2907A,215 Datasheet - Page 3

• Manufacturer Part Number: PMBT2907A,215
• Description: TRANS PNP SW 600MA 60V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT2907A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1740-2; 933821800215; PMBT2907A T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP switching transistors
th(j-a)
SYMBOL
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
PMBT2907
PMBT2907A
PARAMETER
PARAMETER
open emitter
open base
open collector
T
amb
3
≤ 25 °C
note 1
CONDITIONS
CONDITIONS
PMBT2907; PMBT2907A
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
Product data sheet
−60
−40
−60
−5
−600
−800
−200
250
+150
150
+150
MAX.
UNIT
K/W
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT