2SB1197KT146R Rohm Semiconductor, 2SB1197KT146R Datasheet
2SB1197KT146R
Manufacturer Part Number
2SB1197KT146R
Description
TRANS PNP 32V 0.8A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1197KT146Q.pdf
(3 pages)
Specifications of 2SB1197KT146R
Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 32 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
0.2 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
200 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1197KT146R
2SB1197KT146RTR
2SB1197KT146RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1197KT146R
Manufacturer:
ROHM Semiconductor
Quantity:
1 917
Company:
Part Number:
2SB1197KT146R
Manufacturer:
ROHM
Quantity:
3 122
Part Number:
2SB1197KT146R
Manufacturer:
ROHM
Quantity:
20 000
Transistors
Low Frequency Transistor ( 32V, 0.8A)
2SB1197K
1) Low V
2) I
3) Complements the 2SD1781K.
Epitaxial planar type
PNP silicon transistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Features
Structure
Absolute maximum ratings (Ta=25 C)
Electrical characteristics (Ta=25 C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
V
C
CE(sat)
I
= 0.8A.
C
/ I
CE(sat)
B
= 0.5A / 50mA
Parameter
Parameter
.
0.5V
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
Symbol
C
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
Min.
−40
−32
120
−5
−
−
−
−
−
−55 to 150
Limits
−0.8
−40
−32
150
−5
0.2
∗
External dimensions (Unit : mm)
Denotes h
Typ.
200
12
ROHM : SMT3
EIAJ : SC-59
−
−
−
−
−
−
−
−0.5
−0.5
−0.5
Max.
FE
390
30
−
−
−
−
Unit
°C
°C
W
V
V
V
A
MHz
Unit
μ A
μ A
pF
V
V
V
V
−
(1)
0.95 0.95
2.9
1.9
I
I
I
V
V
I
V
V
V
C
C
E
C
±
±
CB
EB
CE
CE
CB
= −50 μ A
= −1mA
= −50 μ A
/I
0.2
0.2
(2)
(3)
All terminals have the
same dimensions
0.4
B
= −4V
= −20V
= −3V, I
= −5V, I
= −10V, I
Abbreviated symbol: AH
= −0.5A/ −50mA
+
−0.05
0.1
Conditions
C
E
=50mA, f=100MHz
= −100mA
E
=0A, f=1MHz
0.15
+
−0.06
1.1
0.1
Rev.A
0.8
+
−0.1
0.2
±
∗
0.1
2SB1197K
0
~
0.1
1/2
(1) Emitter
(2) Base
(3) Collector
Related parts for 2SB1197KT146R
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
DIODE SWITCH 80V 25MA SMD5 TR
Manufacturer:
Rohm Semiconductor
Datasheet:
2SB1197KT146R Summary of contents
Page 1
Transistors Low Frequency Transistor ( 32V, 0.8A) 2SB1197K Features 1) Low V . CE(sat) V 0.5V CE(sat 0.5A / 50mA 0.8A Complements the 2SD1781K. Structure Epitaxial planar type PNP ...
Page 2
Transistors Packaging specifications and h FE Package Code Type h Basic ordering unit (pieces) FE 2SB1197K QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE −200 Ta=25°C −180 −160 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...