MMBTA63LT1G ON Semiconductor, MMBTA63LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBTA63LT1G
• Description: TRANS SS DARL PNP 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA63LT1G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 0.5 A
• Dc Collector/base Gain Hfe Min: 5000
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA63LT1GOSTR

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage
Base − Emitter On Voltage
Current −Gain − Bandwidth Product
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
CB
EB
= −100 mAdc)
= −10 mAdc, V
= −10 mAdc, V
= −100 mAdc, V
= −100 mAdc, V
= −100 mAdc, I
= −100 mAdc, V
= −10 mAdc, V
= −10 Vdc)
= −30 Vdc)
CE
CE
CE
B
CE
CE
CE
= −0.1 mAdc)
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc, f = 100 MHz)
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
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2
MMBTA63
MMBTA64
MMBTA63
MMBTA64
V
Symbol
V
V
(BR)CEO
CE(sat)
I
I
BE(on)
CBO
h
EBO
f
FE
T
10,000
10,000
20,000
5,000
Min
−30
125
−
−
−
−
−100
−100
Max
−1.5
−2.0
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
−