MMBTA63LT1G ON Semiconductor, MMBTA63LT1G Datasheet - Page 3
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MMBTA63LT1G
Manufacturer Part Number
MMBTA63LT1G
Description
TRANS SS DARL PNP 30V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTA63LT1G.pdf
(4 pages)
Specifications of MMBTA63LT1G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 0.5 A
Dc Collector/base Gain Hfe Min
5000
Minimum Operating Temperature
- 55 C
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA63LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON Semiconductor
Quantity:
30 531
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
INF
Quantity:
5 825
Part Number:
MMBTA63LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
-2.0
-1.6
-1.2
-0.8
-0.4
200
100
7.0
5.0
3.0
2.0
4.0
3.0
2.0
1.0
0.4
0.2
0.1
70
50
30
20
10
10
-0.3
0
-0.3
-1.0 -2.0
-0.5
V
f = 100 MHz
T
A
CE
T
= 25°C
A
V
Figure 4. High Frequency Current Gain
= -5.0 V
CE(sat)
= 25°C
-0.5 -0.7
-1.0
-5.0
@ I
-2 -3 -5
I
I
C
C
Figure 3. “On” Voltage
C
T
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
A
B
-10 -20
= 125°C
= 1000
-1.0
-55°C
25°C
-10
V
BE(on)
V
-50
BE(sat)
-2.0
-20 -30 -50
@ V
-100 -200
@ I
CE
C
-3.0
I
/I
C
= -5.0 V
B
/I
B
= 100
= 100
-100 -200 -300
Figure 1. DC Current Gain
I
-500
C
-5.0
http://onsemi.com
, COLLECTOR CURRENT (mA)
-1K
-7.0
3
-10
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
0.001
0.01
0.1
-0.1-0.2
1
0.01
I
C
=
Single Pulse Test
-0.5
@ T
-20
Figure 2. Collector Saturation Region
-10 mA -50 mA -100 mA -175 mA
A
-1 -2 -5 -10 -20 -50 -100-200-500
= 25°C
V
Figure 5. Safe Operating Area
CE
-30
V
0.1
, COLLECTOR-EMITTER VOLTAGE (V)
CE
= -2.0 V
I
B
-5.0 V
, BASE CURRENT (mA)
-50
1.0
-70
-100
Thermal Limit
-300 mA
10
-1K-2K
-200
T
A
-10 V
= 25°C
100 ms
10 ms
-5K
1 s
1 ms
-300
-10K
100