PBSS4140T,215 NXP Semiconductors, PBSS4140T,215 Datasheet - Page 3

• Manufacturer Part Number: PBSS4140T,215
• Description: TRANS NPN 40V 1000MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4140T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 450mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 450 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4154-2; 934056515215; PBSS4140T T/R; PBSS4140T T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2005 Feb 24
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
40 V, 1A
NPN low V
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction
to ambient
CEsat
PARAMETER
PARAMETER
(BISS) transistor
open emitter
open base
open collector
T
T
in free air; note 1
in free air; note 2
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 2
CONDITIONS
CONDITIONS
3
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
TYPICAL
417
278
40
40
5
1
2
1
300
450
+150
150
+150
PBSS4140T
MAX.
Product data sheet
UNIT
K/W
K/W
V
V
V
A
A
A
mW
mW
°C
°C
°C
2
2
UNIT
.
.