2N3906G ON Semiconductor, 2N3906G Datasheet - Page 2

• Manufacturer Part Number: 2N3906G
• Description: TRANS SS PNP GP 40V 200MA TO-92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N3906G

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 200 mA
• Current, Gain: 30
• Frequency: 250 MHz
• Package Type: TO-92
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 40 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N3906G; 2N3906GOS

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(V
I
(V
(V
C
CC
CC
CC
= 10 mAdc, I
= 3.0 Vdc, V
= 3.0 Vdc, I
= 3.0 Vdc, I
(I
C
= 100 mAdc, V
Characteristic
B1
C
C
(T
BE
= 1.0 mAdc)
= 10 mAdc, I
= 10 mAdc, I
(I
(I
(I
(I
(I
A
C
= 0.5 Vdc,
C
C
C
C
= 25°C unless otherwise noted)
= 10 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
CE
= 5.0 Vdc, R
(V
(V
CB
EB
(I
(I
(I
(V
(V
B1
B1
(I
(I
C
(I
(I
(I
= 5.0 Vdc, I
= 0.5 Vdc, I
C
C
(I
C
C
C
C
C
http://onsemi.com
CE
CE
= 100 mAdc, V
C
= 0.1 mAdc, V
= 1.0 mAdc, V
= I
= I
= 10 mAdc, V
= 50 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
CE
= 50 mAdc, I
B2
B2
= 30 Vdc, V
= 30 Vdc, V
CE
CE
CE
CE
S
= 20 Vdc, f = 100 MHz)
(I
= 1.0 mAdc)
= 1.0 mAdc)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 1.0 kW, f = 1.0 kHz)
(I
(I
C
C
E
= 1.0 mAdc, I
C
E
2
= 10 mAdc, I
= 10 mAdc, I
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
B
B
B
CE
CE
CE
CE
CE
EB
EB
B
= 1.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
= 5.0 mAdc
= 3.0 Vdc)
= 3.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
B
E
C
= 0)
= 0)
= 0)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
CEX
h
I
h
NF
h
h
BL
f
t
t
obo
t
t
FE
ibo
oe
T
ie
re
fe
d
s
r
f
0.65
Min
100
250
100
5.0
2.0
0.1
3.0
40
40
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.85
0.95
300
400
225
0.4
4.5
4.0
50
50
10
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
dB
pF
pF
ns
ns
ns
ns
−
−
− 4