PBSS305PZ,135 NXP Semiconductors, PBSS305PZ,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS305PZ,135
• Description: TRANS PNP 80V 4.5A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PZ,135

• Transistor Type: PNP
• Current - Collector (ic) (max): 4.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 225mA, 4.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-4182-2; 934059053135; PBSS305PZ /T3; PBSS305PZ /T3

NXP Semiconductors
PBSS305PZ_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
600
400
200
−10
−10
0
0
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−10
−10
2
2
−10
−10
006aaa629
006aaa630
3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
−10
−10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
−1.2
−0.8
−0.4
C
−14
−12
−10
−8
−6
−4
−2
−10
0
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
80 V, 4.5 A PNP low V
C
−1
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−2
−10
PBSS305PZ
−3
2
CEsat
I
B
(mA) = −600
−10
© NXP B.V. 2009. All rights reserved.
−540 −480
−420 −360
−300
−180
−4
(BISS) transistor
006aaa635
006aaa633
V
3
I
C
CE
−240
−120
(mA)
−60
(V)
−10
−5
4
7 of 14