2N5194G ON Semiconductor, 2N5194G Datasheet - Page 4

• Manufacturer Part Number: 2N5194G
• Description: TRANS PNP PWR GP 4A 60V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of 2N5194G

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.4V @ 1A, 4A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 1.5A, 2V
• Power - Max: 40W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current, Collector: 4 A
• Current, Gain: 10
• Frequency: 2 MHz
• Package Type: TO-225AA
• Polarity: PNP
• Power Dissipation: 40 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.12 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 1.4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5194GOS

APPROX
V
APPROX
−11 V
BE(off)
5.0
2.0
1.0
0.5
0.2
0.1
−11 V
0.07
0.05
0.03
0.02
10
Figure 7. Switching Time Equivalent Test Circuit
2.0
1.0
0.7
0.5
0.3
0.2
0.1
V
1.0
in
0.05
V
in
0
TURN−OFF PULSE
CURVES APPLY BELOW RATED V
0.07 0.1
TURN−ON PULSE
t
d
T
J
2.0
@ V
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
V
= 150°C
t
CE
2
t
t
1
r
BE(off)
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T
BONDING WIRE LIMIT
@ V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
t
r
@ V
CC
t
I
= 2.0 V
3
C
Figure 9. Turn−On Time
, COLLECTOR CURRENT (AMP)
= 10 V
CC
5.0
0.2
= 30 V
APPROX
0.3
+9.0 V
DUTY CYCLE ≈ 2.0%
5.0 ms
100 < t
10
C
t
t
1
V
C
3
= 25°C
0.5
V
CC
≤ 7.0 ns
jd
< 15 ns
in
2
CEO
dc
<< C
< 500 ms
0.7
1.0 ms
20
R
2N5194
2N5195
eb
R
B
+4.0 V
R
TO OBTAIN DESIRED
CURRENT LEVELS
C
B
1.0
AND R
I
T
C
J
/I
C
= 25°C
B
50
VARIED
= 10
2.0
100 ms
2N5194, 2N5195
http://onsemi.com
SCOPE
3.0
100
4.0
4
Note 1:
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. At high−case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
500
300
200
100
0.07
0.05
0.03
0.02
There are two limitations on the power handling ability of
The data of Figure 11 is based on T
70
50
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.05
0.07 0.1
0.2 0.3 0.5
t
f
t
s
@ V
′
V
Figure 10. Turn−Off Time
I
R
C
Figure 8. Capacitance
, REVERSE VOLTAGE (VOLTS)
CC
, COLLECTOR CURRENT (AMP)
0.2
= 10 V
1.0
t
f
0.3
@ V
2.0
CC
= 30 V
0.5
3.0
0.7
C
5.0
eb
J(pk)
1.0
= 150_C. T
10
I
I
t
T
B1
C
s
J
′ = t
/I
= 25°C
B
= I
T
= 10
J
2.0
s
B2
= 25°C
20
− 1/8 t
C
3.0
C
− V
30
cb
f
J(pk)
4.0
C
40
CE
is