2N5195 STMicroelectronics, 2N5195 Datasheet - Page 2

• Manufacturer Part Number: 2N5195
• Description: TRANSISTOR PNP -80V -4A SOT-32
• Manufacturer: STMicroelectronics

Specifications of 2N5195

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 1A, 4A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 1.5A, 2V
• Power - Max: 40W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 40 W
• Continuous Collector Current: - 4 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 2 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2585-5

Electrical ratings
1
2/9
Electrical ratings
Table 2.
Table 3.
Symbol
Symbol
R
R
V
V
V
T
P
I
thJC
CBO
CEO
thJA
EBO
CM
STG
T
I
I
TOT
C
B
J
Thermal resistance junction-case ______________Max
Thermal resistance junction-ambient
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current
Base current
Total dissipation at T
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
case
Doc ID 5074 Rev 4
C
Parameter
E
= 0)
Parameter
= 25 °C
= 0)
B
= 0)
___________
Max
-65 to 150
Value
150
-80
-80
40
Value
-5
-4
-7
-1
3.12
100
Unit
2N5195
°C
°C
W
V
V
V
A
A
A
°C/W
°C/W
Unit