2N5195 STMicroelectronics, 2N5195 Datasheet - Page 3

• Manufacturer Part Number: 2N5195
• Description: TRANSISTOR PNP -80V -4A SOT-32
• Manufacturer: STMicroelectronics

Specifications of 2N5195

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 1A, 4A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 1.5A, 2V
• Power - Max: 40W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 40 W
• Continuous Collector Current: - 4 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 2 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2585-5

2N5195
2
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristic (curves)
Figure 2.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(on)
I
I
I
I
h
CBO
CEX
CEO
EBO
f
FE
= 25 °C unless otherwise specified.
T
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
Transition frequency
DC current gain (V
E
B
C
B
BE
= 0)
= 0)
= 0)
= 0)
= - 1.5 V)
Parameter
Doc ID 5074 Rev 4
CE
= - 2 V)
V
V
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CB
CE
CE
CE
EB
= - 100 mA
= - 1.5 A
= - 4 A
= - 1.5 A
= - 1.5 A
= - 4 A
= - 1 A
= 80 V
= 80 V
= 80 V
= 80 V
= - 5 V
Test conditions
Figure 3.
_
_
_
_
_
_V
_
I
I
V
V
B
B
V
CE
T
CE
CE
CE
= - 0.15 A
= - 1 A
c
= - 2 V
= 125 °C
= - 2 V
= - 10 V
= - 2 V
DC current gain (V
Electrical characteristics
Min.
-80
20
7
2
Typ. Max.
CE
-0.1
-0.1
-0.6
-1.2
-1.2
80
-2
-1
-1
= - 4 V)
MHz
Unit
mA
mA
mA
mA
mA
V
V
V
V
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