PMBT2222,235 NXP Semiconductors, PMBT2222,235 Datasheet - Page 3

• Manufacturer Part Number: PMBT2222,235
• Description: TRANS NPN 30V 600MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT2222,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933846830235; PMBT2222 /T3; PMBT2222 /T3

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PMBT2222_PMBT2222A
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
PMBT2222
PMBT2222A
PMBT2222
PMBT2222A
PMBT2222
PMBT2222A
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 12 November 2010
Conditions
in free air
PMBT2222; PMBT2222A
Conditions
open emitter
open base
open collector
T
amb
≤ 25 °C
[1]
Min
-
[1]
NPN switching transistors
-
Min
-
-
-
-
-
-
-
-
-
-
−65
−65
Typ
-
© NXP B.V. 2010. All rights reserved.
Max
60
75
30
40
5
6
600
800
200
250
150
+150
+150
Max
500
Unit
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
Unit
K/W
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