PMST2369,115 NXP Semiconductors, PMST2369,115 Datasheet

TRANS NPN 15V 200MA SOT323

PMST2369,115

Manufacturer Part Number
PMST2369,115
Description
TRANS NPN 15V 200MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.PMST2369115.pdf (7 pages)

Specifications of PMST2369,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
200mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
200 mA
Maximum Dc Collector Current
300 mA
Power Dissipation
200 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934030840115
PMST2369 T/R
PMST2369 T/R
Product data sheet
Supersedes data of 1997 May 05
dbook, halfpage
DATA SHEET
PMST2369
NPN switching transistor
DISCRETE SEMICONDUCTORS
M3D187
1999 Apr 22

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PMST2369,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage PMST2369 NPN switching transistor Product data sheet Supersedes data of 1997 May 05 DISCRETE SEMICONDUCTORS M3D187 1999 Apr 22 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching applications, primarily in portable and consumer equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package. MARKING TYPE NUMBER PMST2369 Note 1. ∗ Made in Hong Kong. ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I ...

Page 4

... NXP Semiconductors NPN switching transistor handbook, full pagewidth = 0 4 500 µ µ Ω kΩ kΩ 0 2 Ω. Oscilloscope: input impedance Z i 1999 Apr (probe) oscilloscope 450 Ω ≤ 270 Ω. Fig.2 Test circuit for switching times (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1999 Apr scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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