BF621,115 NXP Semiconductors, BF621,115 Datasheet - Page 7

• Manufacturer Part Number: BF621,115
• Description: TRANS PNP 300V 50MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BF621,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 5mA, 30mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Power - Max: 1.1W
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 1100 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933659270115; BF621 T/R; BF621 T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 14
I
I
h
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
PNP high-voltage transistors
re
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= −25 mA; V
= −30 mA; I
= i
= −10 mA; V
c
= 0 A; V
7
CB
CB
EB
CONDITIONS
= −200 V
= −200 V; T
= −5 V
B
CE
CE
CE
= −5 mA
= −30 V; f = 1 MHz
= −20 V
= −10 V; f = 100 MHz
j
= 150 °C
−
−
−
50
−
−
60
MIN.
BF621; BF623
Product data sheet
−10
−10
−50
−
−800
1.6
−
MAX.
nA
µA
nA
mV
pF
MHz
UNIT