AP602-F TriQuint, AP602-F Datasheet - Page 4

• Manufacturer Part Number: AP602-F
• Description: RF Amplifier 800-2400MHz 13dB Gain
• Manufacturer: TriQuint
• Type: Power Amplifierr

Specifications of AP602-F

• Operating Frequency: 2200 MHz
• Operating Supply Voltage: 28 V
• Supply Current: 112 mA
• Maximum Power Dissipation: 4700 mW
• Maximum Operating Temperature: + 192 C
• Mounting Style: SMD/SMT
• Package / Case: DFN-14
• Number Of Channels: 3 Channels
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1066960

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
Typical WCDMA Performance at 25 °C
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
18
17
16
15
14
13
-42
-46
-50
-54
-58
-62
at a channel power of +27 dBm
0.8
18
ACLR1 vs. Output Power vs. Frequency
AP602
High Dynamic Range 4W 28V HBT Amplifier
869MHz
894MHz
940MHz
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
0.84
C24
20
L3
WCDMA, Vcc= 28V, Icq = 40mA, 25
Gain vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 ˚C
Frequency (GHz)
Output Power (dBm)
0.88
880MHz
920MHz
960MHz
22
869-960 MHz Application Circuit Performance Plots
0.92
869-960 Application Circuit (AP602-PCB900)
24
WCDMA 3GPP TM 1+64 DPCH;
PAR = 8.6 @0.01%
60% clipping, Ch. BW = 3.84 MHz;
+35.7 dBm
0.96
940 MHz
+27 dBm
C30
o
C
103 mA
15.5 dB
-50 dBc
-50 dBc
26
80 mA
6.4 dB
+28 V
11 dB
17 %
+5 V
L10
1
28
-40
-50
-60
-70
-80
-10
-15
-20
-25
-5
0
0.8
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. C20 is not required in the final design if there is no DC signal present at the output of the
4. The center of C24 is placed at 0.280” (11.5° @ 940 MHz) from the edge of the AP602 (U1).
5. The center of L10 is placed at 0.570” (23.4° @ 940 MHz) from the edge of the AP602 (U1).
6. The center of C19 is placed at 0.050” (2.1° @ 940 MHz) the center of L10.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component L3 and L4 for this particular reference design.
22
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C
IMD3L
IMD3U
IMD5
amplifier circuit.
S11
S22
0.85
24
Output Power, PEP (dBm)
S11, S22 vs. Frequency
IMD vs. Output Power
Vcc = 28V, Icq = 80 mA, 25 ˚C
0.9
Frequency (GHz)
26
See note 4
0.95
2 Ohm
28
1
30
1.05
1000pF
C7
1.1
32
Specifications and information are subject to change without notice
50
40
30
20
10
25
20
15
10
0
5
0
18
18
920 MHz
940 MHz
960 MHz
Efficiency vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
920 MHz
940 MHz
960 MHz
20
Average Output Power (dBm)
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
22
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
Output Power (dBm)
22
See note 5
W = .030”
L = 1.570”
8.2 nH
26
Page 4 of 11 May 2007 ver 1
100pF
100pF
L10
C15
C30
24
30
C19
0.4 pF
See note 6
26
34
28