MJE5742G ON Semiconductor, MJE5742G Datasheet - Page 3
MJE5742G
Manufacturer Part Number
MJE5742G
Description
TRANS DARL NPN 8A 400V TO220AB
Manufacturer
ON Semiconductor
Type
High Voltage, Powerr
Specifications of MJE5742G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 400mA, 8A
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2A, 5V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
8 V
Maximum Dc Collector Current
8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
200, 50
Minimum Operating Temperature
- 65 C
Current, Gain
400
Current, Input
2.5 A
Current, Output
8 A
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
8 V
Voltage, Output
400 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE5742GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE5742G
Manufacturer:
ON Semiconductor
Quantity:
1 862
Company:
Part Number:
MJE5742G
Manufacturer:
FSC
Quantity:
2 000
2000
1000
100
100
80
60
40
20
10
0
0.1
0
V
CE
20
= 5 V
THERMAL DERATING
Figure 3. DC Current Gain
40
I
Figure 1. Power Derating
C
, COLLECTOR CURRENT (AMPS)
T
C
, CASE TEMPERATURE (°C)
60
SECOND BREAKDOWN DERATING
80
1
+ 25°C
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.1
150°C
- 55°C
1
100
Figure 5. Collector−Emitter Saturation Voltage
2
+150°C
0.2
+ 25°C
TYPICAL CHARACTERISTICS
120
h
FE
I
= 20
C
5
, COLLECTOR CURRENT (AMPS)
140
- 55°C
http://onsemi.com
0.5
10
160
1
3
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
2
1
V
I
I
B
C
CE
Figure 2. Inductive Switching Measurements
0.2
- 55°C
+ 25°C
5
Figure 4. Base−Emitter Voltage
+150°C
90% I
h
I
FE
C
, COLLECTOR CURRENT (AMPS)
= 20
B1
0.5
10
t
sv
I
C(pk)
TIME
1
90% V
10% V
CE(pk)
t
rv
2
CE(pk)
t
c
90% I
t
fi
I
C
10%
C(pk)
5
V
CE(pk)
t
ti
2% I
C
10