BGM 781N11 E6327 Infineon Technologies, BGM 781N11 E6327 Datasheet - Page 6

RF Amplifier RF SILICON MMIC

BGM 781N11 E6327

Manufacturer Part Number
BGM 781N11 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
GPS Front-End Moduler
Datasheet

Specifications of BGM 781N11 E6327

Operating Frequency
1575.42 MHz
P1db
3 dBm
Noise Figure
1.7 dB
Operating Supply Voltage
1.8 V
Supply Current
25 mA
Maximum Power Dissipation
90 mW
Maximum Operating Temperature
+ 85 C
Package / Case
TSNP-11-2
Minimum Operating Temperature
- 40 C
Other names
BGM781N11E6327XT
Table 2
Parameter
RF input power out of band
Total power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
ESD capability HBM of all pins, with
pin 6 and GND middle island pin 11
tied together
ESD contact discharge capability of
RF input pin 5
1) All voltages refer pin-to-pin, unless otherwise specified.
Data Sheet
1)
Maximum Ratings (cont’d)
Symbol
P
P
T
T
T
V
V
J
A
STG
IN,OOB
tot
ESD1
ESD2
Value
21
90
150
-40... 85
-65... 85
2
8
6
Unit
mW
°C
°C
°C
kV
kV
Note / Test Condition
Continuous wave signal
f
1710 - 4000 MHz
50 ohm source and load
impedances
according to JESD22A-114
according to IEC61000-4-2
= 50 - 1460 MHz and
Rev.3.2, 2010-10-28
BGM781N11
Description

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