BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 25

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

3.2
Figure 3
Note: Package paddle (Pin 0) has to be RF grounded.
Table 20
Part Number
L1 ... L6
C1 ... C9
R
Data Sheet
REF
UMTS Bands 3, 7, 8, 9 and 38 Application Circuit Schematic
Application Circuit with Chip Outline (Top View)
Bill of Materials
Bands 7 / 38
Bands 3 / 9
RFIN
Part Type
Chip inductor
Chip capacitor
Chip resistor
RFIN
22pF
C3
22 pF
C1
22pF
C2
2.4nH
Band 8
L 2
RFIN
4.3 nH
L1
3 pF
L1
L1
C4
3 pF
C5
22 pF
RFINM
RFINH
RFGNDM
C6
0
5
6
7
8
9
n/c
n/c
GND
8.5nH
L3
Manufacturer
Various
Various
Various
L1
10
4
RFINL
RFGNDH
10nF
C9
V
EN
25
V
= 0 / 2.8V
CC
11
3
= 2.8V
VCC
Biasing & Logic
VEN2
High Linearity Tri-Band LTE/UMTS LNA
BGA735N16_Appl_Bands_3_7_8_9_38_BlD.vsd
Circuitry
V
V
GS
EN
= 0 / 2 .8V
Size
0402
0402
0402
12
= 0 / 2.8V
2
VEN1
VGS
Application Circuit and Block Diagram
RFOUTM
RFOUTH
RREF
RFOUTL
n /c
16
15
14
13
1
3.9 nH
1.5nH
3.3nH
L5
L 4
L 6
R
27 kΩ
REF
1.5pF
C7
1pF
Revision 3.8, 2010-12-23
RFOUT
Bands 3 / 9
C8
RFOUT
Band 8
RFOUT
Bands 7 / 38
Comment
Wirewound, Q ≈ 50
BGA735N16