BGD814 NXP Semiconductors, BGD814 Datasheet - Page 5
BGD814
Manufacturer Part Number
BGD814
Description
RF Amplifier BULK CATV
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet
1.BGD814112.pdf
(10 pages)
Specifications of BGD814
Operating Frequency
870 MHz
Operating Supply Voltage
24 V
Supply Current
410 mA
Mounting Style
SMD/SMT
Package / Case
SOT-115
Number Of Channels
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGD814,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BGD814
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
BGD814
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler
amplifier
Fig.4
Z
(1) V
(2) Typ. +3 .
Fig.2
Z
(1) V
(2) Typ. +3 .
S
S
CSO
CTB
−100
(dB)
(dB)
= Z
= Z
−50
−60
−70
−80
−90
−60
−70
−80
−90
o
o
L
L
.
.
0
0
= 75 ; V
= 75 ; V
Composite second order distortion as a
function of frequency under tilted conditions.
Composite triple beat as a function of
frequency under tilted conditions.
200
200
B
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
800
800
f (MHz)
f (MHz)
(1)
(1)
(2)
(3)
(4)
(2)
(4)
MLD345
MLD347
(3)
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
5
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.3
X mod
S
(dB)
= Z
−40
−50
−60
−70
−80
o
L
.
= 75 ; V
0
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
400
600
Product specification
800
f (MHz)
(1)
BGD814
MLD346
(2)
(3)
(4)
1000
(dBmV)
52
48
44
40
36
V o