2N6517TA Fairchild Semiconductor, 2N6517TA Datasheet
首页 Discrete Semiconductor Products Transistors (BJT) - Single 2N6517TA
Manufacturer Part Number
2N6517TA
Description
TRANSISTOR NPN 350V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N6517TA
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
FAIRCHILD/仙童
© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
2N6517
NPN Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• Collector Dissipation: P
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
Absolute Maximum Ratings
Electrical Characteristics
Symbol
Symbol
BV
BV
BV
V
V
V
T
I
I
h
CBO
EBO
P
CBO
CEO
EBO
T
STG
I
FE
CBO
CEO
EBO
C
C
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
C
(max) = 625mW
Parameter
Parameter
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
T
a
= 25°C unless otherwise noted
T
a
2N6517
2N6517C
2N6517
2N6517C
2N6517C
= 25°C unless otherwise noted
I
I
I
I
I
V
V
V
V
V
V
V
V
C
C
C
C
E
2N6517
2N6517C
2N6517C
2N6517
CB
EB
CE
CE
CE
CE
CE
CE
= 10µA, I
= 100µA, I
= 100µA, I
= 1mA, I
= 1mA, I
1
= 5V, I
= 250V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
Conditions
C
B
B
C
C
C
C
C
C
C
= 0
= 0
= 0
E
E
= 0
E
= 1mA
= 10mA
= 30mA
= 50mA
= 100mA
= 5mA
= 0
= 0
= 0
-55 ~ 150
Value
350
400
350
400
500
625
150
6
1. Emitter 2. Base 3. Collector
1
Min.
350
400
350
400
20
30
30
20
15
50
6
TO-92
Max.
200
200
200
50
50
Units
www.fairchildsemi.com
August 2010
mW
mA
°C
°C
V
V
V
V
V
Units
nA
nA
V
V
V
V
V
Related parts for 2N6517TA
2N6517TA Summary of contents
... Collector-Emitter Breakdown Voltage * CEO BV Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain * FE © 2010 Fairchild Semiconductor Corporation 2N6517 Rev 25°C unless otherwise noted a Parameter 2N6517 2N6517C 2N6517 2N6517C T = 25°C unless otherwise noted a Conditions ...
... Base-Emitter Saturation Voltage BE(sat) C Output Capatitance ob f Current Gain Bandwidth Product * T V Base-Emitter On Voltage BE(on) * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 (Continued 25°C unless otherwise noted a Conditions I = 10mA 1mA 20mA, I ...
... 125 C 0 [mA], COLLECTOR CURRENT C Figure 3. Saturation Voltage 10000 1000 125 C 100 0.1 50 100 150 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector CutOff Current © 2010 Fairchild Semiconductor Corporation 2N6517 Rev 10V 125 C 100 1000 100 1000 200 250 300 350 3 100 125 0.1 ...
... Figure 9. Current Gain Bandwidth Product 10000 t OFF t stg 1000 t f 100 V =100V =5I =-5I , Ta= [mA], COLLECTOR CURRENT C Figure 11. Resistive Load Switching © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 (Continued 1MHz 100 1.0 1000 100 10 100 10 Figure 10. Resistive Load Switching 100 1MHz 1.5 2.0 2.5 3.0 3 ...
... Physical Dimensions 0.46 1.27TYP [1.27 0.20 © 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 TO-92 +0.25 4.58 –0.15 0.10 1.27TYP ] [1.27 ] 0.20 3.60 0.20 (R2.29) 5 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS Auto-SPM FRFET Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...
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