2N6517TA Fairchild Semiconductor, 2N6517TA Datasheet - Page 4

• Manufacturer Part Number: 2N6517TA
• Description: TRANSISTOR NPN 350V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N6517TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
Typical Performance Characteristics
Figure 9. Current Gain Bandwidth Product
10000
100
1000
10
100
2.0
1.8
1.6
1.4
1.2
1.0
1
10
1
10
Figure 11. Resistive Load Switching
0
V
I
t
t
C
Figure 7. Output Capacitance
OFF
stg
t
CC
=5I
f
=100V
B1
V
=-5I
CB
I
20
C
I
C
[V], COLLECTOR-BASE VOLTAGE
[mA], COLLECTOR CURRENT
B2
[mA], COLLECTOR CURRENT
, Ta=25
o
40
C
10
60
80
f = 1MHz
100
100
100
(Continued)
4
1000
100
50
45
40
35
30
25
20
10
1.0
10
Figure 10. Resistive Load Switching
t
t
t
V
I
ON
r
d
C
CC
=5I
Figure 8. Input Capacitance
1.5
=100V
B1
=-5I
V
EB
I
C
2.0
B2
[V], EMITTER-BASE VOLTAGE
[mA], COLLECTOR CURRENT
, Ta=25
2.5
o
C
3.0
3.5
4.0
f = 1MHz
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4.5
5.0
100