BGF802-20 NXP Semiconductors, BGF802-20 Datasheet - Page 3

• Manufacturer Part Number: BGF802-20
• Description: RF Amplifier LDMOS MOD
• Manufacturer: NXP Semiconductors
• Type: Base Station LDMOS RF Power Moduler

Specifications of BGF802-20

• Operating Frequency: 894 MHz
• Operating Supply Voltage: 26 VDC
• Maximum Operating Temperature: + 90 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-365
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGF802-20,127

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
Note
1. G
2005 Jun 03
V
P
P
T
T
I
P
G
G
VSWR
H
H
IS95 CDMA (P
ACPR
ACPR
mb
DQ
stg
mb
G
G
S
D
L
1dB
2
3
CDMA800 power module
p
OB
p freq
p pwr
freq
= 25 C; V
SYMBOL
SYMBOL
Pi
750 kHz
1.98 MHz
in
is small signal in-band gain.
S
L
= 28 V; P
= 3 W average)
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
quiescent current (pin 2)
load power
power gain
gain flatness over
frequency range
gain flatness over power
band
phase linearity over
frequency range
delay flatness
out of band gain
input VSWR
second harmonic
third harmonic
stability
ruggedness
efficiency
spectral regrowth;
measured in 30 kHz RBW
L
PARAMETER
= 3.0 W; f = 869 to 894 MHz; Z
PARAMETER
P
at 1 dB gain compression
P
small signal, P
894 MHz < f < 869 MHz
VSWR
phases; V
VSWR = 10 : 1 through all
phases; P
D
L
= 30 mW up to 3 W
= 0 mW
CONDITIONS
3 : 1 through all
S
S2
L
3
= Z
= 5 W
= 25 to 28 V
D
L
= 0 dBm;
= 50
unless otherwise specified.
245
28
all spurious outputs more than 60 dB
below desired signal
15
18
40
20
0.8
MIN.
MIN.
no degradation in output power
280
25
30
0.2
0.2
200
1.6 : 1
18
0.2
37
61
53
69
TYP.
30
100
30
+100
+90
MAX.
320
32
1
0.2
G
note 1
2 : 1
Product specification
BGF802-20
34
58
49
66
Pi max
MAX.
+ 1
V
mW
W
C
C
UNIT
mA
W
dB
dB
dB
deg
ps
dB
dBc
dBc
%
dBc
dBc
UNIT