BGA2715 T/R NXP Semiconductors, BGA2715 T/R Datasheet - Page 8

RF Amplifier TAPE-7 MMIC-RFSS

BGA2715 T/R

Manufacturer Part Number
BGA2715 T/R
Description
RF Amplifier TAPE-7 MMIC-RFSS
Manufacturer
NXP Semiconductors
Type
Generic 50 Ohm Gain Blockr
Datasheet

Specifications of BGA2715 T/R

Operating Frequency
1 GHz
Noise Figure
2.6 dB
Bandwidth
3300 MHz
Operating Supply Voltage
5 V
Supply Current
4.3 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA2715,115
Philips Semiconductors
9397 750 13291
Product data sheet
Fig 8. Isolation ( s
Fig 10. Load power as a function of drive power at
(dBm)
|s
(dB)
(1) V
(2) V
(3) V
P
12
L
|
20
40
60
10
20
30
2
0
0
I
typical values.
f = 1 GHz; Z
1 GHz; typical values.
S
0
50
S
S
S
= 4.3 mA; V
= 5.5 V.
= 5 V.
= 4.5 V.
1000
o
40
= 50 .
S
12
= 5 V; P
2
) as a function of frequency;
2000
30
D
= 35 dBm; Z
3000
20
P
f (MHz)
001aab249
001aab251
D
o
(dBm)
= 50 .
(1)
(2)
(3)
Rev. 02 — 24 September 2004
4000
10
Fig 9. Insertion gain ( s
Fig 11. Load power as a function of drive power at
(dBm)
|s
(dB)
(1) I
(2) I
(3) I
(1) V
(2) V
(3) V
P
21
L
|
30
20
10
10
20
30
2
0
0
P
frequency; typical values.
f = 2.2 GHz; Z
2.2 GHz; typical values.
S
S
S
0
50
D
S
S
S
= 4.7 mA; V
= 4.3 mA; V
= 3.9 mA; V
= 5.5 V.
= 5 V.
= 4.5 V.
= 35 dBm; Z
1000
40
o
S
S
S
(1)
(2)
(3)
= 50 .
= 5.5 V.
= 5 V.
= 4.5 V.
o
= 50 .
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
21
2000
30
2
MMIC wideband amplifier
) as a function of
3000
BGA2715
20
P
f (MHz)
001aab250
001aab252
(1)
(3)
D
(2)
(dBm)
4000
10
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