BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet
BGM1012 T/R
Specifications of BGM1012 T/R
Related parts for BGM1012 T/R
BGM1012 T/R Summary of contents
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DATA SHEET dbook, halfpage BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 DISCRETE SEMICONDUCTORS MBD128 2002 Sep 06 ...
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... NXP Semiconductors MMIC wideband amplifier FEATURES Internally matched to 50 Very wide frequency range (4 GHz bandwidth) Very flat 20 dB gain (DC to 2.9 GHz flatness) 10 dBm saturated output power at 1 GHz High linearity (18 dBm IP3 (out) Low current (14.6 mA) ...
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... NXP Semiconductors MMIC wideband amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V DC supply voltage S I supply current S P total power dissipation tot T storage temperature stg T operating junction temperature j P maximum drive power D THERMAL CHARACTERISTICS ...
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... NXP Semiconductors MMIC wideband amplifier CHARACTERISTICS = 25 C; unless otherwise specified 14.6 mA SYMBOL PARAMETER I supply current S s 2 insertion power gain 21 R return losses input return losses output L OUT s 2 isolation 12 NF noise figure BW bandwidth K stability factor P saturated load power L(sat) ...
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... NXP Semiconductors MMIC wideband amplifier APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGM1012 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz ...
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... NXP Semiconductors MMIC wideband amplifier handbook, full pagewidth 180° = 30 dBm 14.6 mA handbook, full pagewidth 180° = 30 dBm 14.6 mA 2002 Sep 06 90° +1 135° +0.5 +0.2 100 MHz 4 GHz 0.2 0.5 0 −0.2 −0.5 −135° −1 −90° ...
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... NXP Semiconductors MMIC wideband amplifier 0 handbook, halfpage (dB) −10 −20 −30 −40 −50 0 1000 2000 = 30 dBm 14.6 mA 2 Fig.9 Isolation ( function of frequency; 12 typical values. 20 handbook, halfpage P L (dBm −10 −20 −40 −30 − GHz ( Fig.11 Load power as a function of drive power at 1 GHz ...
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... NXP Semiconductors MMIC wideband amplifier 5.5 handbook, halfpage NF (dB) 5.3 5.1 4.9 (1) (3) (2) 4.7 4.5 0 1000 = 50 ( 10 14 18 Fig.13 Noise figure as a function of frequency; typical values. 2002 Sep 06 MLD916 handbook, halfpage 2000 3000 f (MHz Fig.14 Stability factor as a function of frequency; ...
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Scattering parameters = 30 dBm 14.6 mA (MHz) MAGNITUDE ANGLE MAGNITUDE (ratio) (deg) 100 0.25122 14.607 200 0.27070 2.759 7.969 400 ...
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... NXP Semiconductors MMIC wideband amplifier PACKAGE OUTLINE Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2002 Sep scale 2.2 1.35 2.2 1.3 0.65 1.8 1 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...