MMBTA63 Fairchild Semiconductor, MMBTA63 Datasheet
MMBTA63
Manufacturer Part Number
MMBTA63
Description
TRANSISTOR DARL PNP SOT-23
Manufacturer
Fairchild Semiconductor
Type
PNPr
Datasheet
1.MPSA63.pdf
(4 pages)
Specifications of MMBTA63
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
350mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Package
3SOT-23
Configuration
Single
Peak Dc Collector Current
1.2 A
Maximum Collector Emitter Saturation Voltage
1.5@0.1mA@100mA V
Maximum Collector Cut-off Current
0.1 uA
Maximum Collector Emitter Voltage
30 V
Minimum Dc Current Gain
5000@10mA@5V|10000@100mA@5V
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
1.2 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
5000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA63FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA63LT1
Manufacturer:
ON
Quantity:
2 050
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON Semiconductor
Quantity:
30 531
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
INF
Quantity:
5 825
Part Number:
MMBTA63LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MPSA63 / MMBTA63 / PZTA63 Rev. A1
© 2010 Fairchild Semiconductor Corporation
MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
operations.
Symbol
Symbol
T
V
V
V
R
R
J,
P
CBO
EBO
CES
I
θJC
θJA
C
T
D
stg
E B C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA63
TO-92
Parameter
T
a
= 25°C unless otherwise noted
Parameter
T
a
= 25°C unless otherwise noted
SOT-23
Mark:2U
C
MMBTA63
1
MPSA63
B
83.3
625
200
5.0
E
*MMBTA63
Max.
- 55 to +150
350
357
2.8
Value
-1.2
-30
-30
-10
SOT-223
C
PZTA63
**PZTA63
1,000
125
8.0
B
C
2
www.fairchildsemi.com
.
Units
August 2010
°C
E
V
V
V
A
mW/°C
Units
°C/W
°C/W
mW
Related parts for MMBTA63
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MMBTA63 Summary of contents
Page 1
... Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm © 2010 Fairchild Semiconductor Corporation MPSA63 / MMBTA63 / PZTA63 Rev. A1 MMBTA63 C SOT-23 ...
Page 2
... Typical Pulsed Current Gain vs Collector Current 125 ° ° °C 0 0.01 0 COLLECTOR CURRENT (A) C Figure 1. Typical Pulsed Current Gain vs Collector Current © 2010 Fairchild Semiconductor Corporation MPSA63 / MMBTA63 / PZTA63 Rev 25°C unless otherwise noted a Test Condition = -100μ -30V -10V -10mA ...
Page 3
... Figure 3. Base-Emitter Saturation Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 V = 15V 0.1 0. AMBIE NT TEMP ERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature © 2010 Fairchild Semiconductor Corporation MPSA63 / MMBTA63 / PZTA63 Rev. A1 (continued) 2 1.6 1.2 125 °C 0.8 0.4 0 0.001 0 100 125 0.1 ° ...
Page 4
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...