MMBTA63 Fairchild Semiconductor, MMBTA63 Datasheet - Page 2

• Manufacturer Part Number: MMBTA63
• Description: TRANSISTOR DARL PNP SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: PNPr

Specifications of MMBTA63

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Package: 3SOT-23
• Configuration: Single
• Peak Dc Collector Current: 1.2 A
• Maximum Collector Emitter Saturation Voltage: 1.5@0.1mA@100mA V
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Collector Emitter Voltage: 30 V
• Minimum Dc Current Gain: 5000@10mA@5V|10000@100mA@5V
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 5000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA63FS

MPSA63 / MMBTA63 / PZTA63 Rev. A1
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Typical Performance Characteristics
Off Characteristics
On Characteristics *
Small Signal Characteristics
BV
Symbol
V
V
CE(sat)
I
I
(BR)CES
BE(on)
h
CBO
EBO
f
FE
T
50
40
30
20
10
0
0.01
Figure 1. Typical Pulsed Current Gain
Typical Pulsed Current Gain
V
CE
Collector-Emitter Breakdown Voltage I
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
= 5V
- 40 °C
vs Collector Current
I - COLLECTOR CURRENT (A)
C
vs Collector Current
25 °C
125 °C
Parameter
0.1
T
a
= 25°C unless otherwise noted
1
V
I
V
I
I
I
I
f = 100MHz
C
C
C
C
C
C
CB
EB
= -100μA, I
= -10mA, V
= -100mA, V
= -100mA, I
= -100mA, V
= -10mA, V
2
= -10V, I
= -30V, I
Test Condition
Figure 2. Collector-Emitter Saturation Voltage
1.6
1.2
0.8
0.4
0.001
C
0
E
B
CE
CE
B
= 0
= 0
CE
CE
= 0
= -0.1mA
= -5.0V
= -5.0V,
Collector-Emitter Saturation
Voltage vs Collector Current
β β
β = 1000
= -5.0V
= -5.0V
- 40 °C
I - COLLECTOR CURRENT (A)
C
vs Collector Current
0.01
10,000
5,000
Min.
125
25 °C
-30
0.1
Max.
-100
-100
-1.5
-2.0
125 °C
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Units
MHz
nA
nA
1
V
V
V