BCW68G Fairchild Semiconductor, BCW68G Datasheet - Page 2

• Manufacturer Part Number: BCW68G
• Description: TRANSISTOR PNP 45V 800MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BCW68G

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 30mA, 300mA
• Current - Collector Cutoff (max): 20nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 160
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
h
V
V
f
C
C
NF
Symbol
V
V
V
V
I
I
T
CES
EBO
FE
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
CE(
BE(
obo
ibo
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
Electrical Characteristics
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
Spice Model
Typical Characteristics
sat
sat
500
400
300
200
100
)
)
0
0.1
Typical Pulsed Current Gain
125 °C
- 40 °C
25 °C
0.3
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Ouput Capacitance
Input Capacitance
Noise Figure
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
vs Collector Current
I - COLLECTOR CURRENT (mA)
C
1
Parameter
3
10
30
100
V
CE
TA = 25°C unless otherwise noted
= 5V
300
I
I
I
I
I
f = 100 MHz
V
V
I
R
B
I
I
I
I
I
V
V
V
C
C
C
C
C
C
C
C
C
C
E
CB
EB
W
CE
CE
EB
S
= 10 mA, V
= 100 mA, V
= 300 mA, V
= 300 mA, I
= 500 mA, I
= 20 mA, V
= 0.2 mA V, V
= 10 mA, I
= 10 A
= 100 A, I
= 10 A, I
= 1.0 k , f = 1.0 kHz,
= 200 Hz
= 10 V, I
= 0.5 V, I
= 4.0 V
= 45 V
= 45 V, T
Test Conditions
C
E
0.5
0.4
0.3
0.2
0.1
E
B
CE
CE
B
B
E
A
= 0, f = 1.0 MHz
0
= 0
CE
CE
= 0, f = 1.0 MHz
= 0
= 30 mA
= 50 mA
1
= 0
= 150 C
= 1.0 V
= 10 V,
CE
PNP General Purpose Amplifier
= 1.0 V
= 1.0 V
= 5.0 V,
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
I - COLLECTOR CURRE NT (mA)
C
10
Min
120
160
100
5.0
125 ° C
45
60
60
60
Max
400
105
1.5
2.0
20
10
20
18
10
25 °C
100
- 40 ° C
(continued)
Units
MHz
nA
nA
pF
pF
dB
V
V
V
V
V
V
500
A