BCW68G Fairchild Semiconductor, BCW68G Datasheet - Page 4
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BCW68G
Manufacturer Part Number
BCW68G
Description
TRANSISTOR PNP 45V 800MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCW68G.pdf
(9 pages)
Specifications of BCW68G
Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
1.5V @ 30mA, 300mA
Current - Collector Cutoff (max)
20nA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
350mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
350 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
160
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Typical Characteristics
Typical Common Emitter Characteristics
50
20
10
5
2
1
0.5
0.2
0.1
10
5
2
1
_
1
t
Common Emitter Characteristics
30 ns
60 ns
r
and Turn On Base Currents
= 15 V
Rise Time vs Collector
I
_
C
2
I - COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
C
_
5
100
_
10
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
1
-40
Common Emitter Characteristics
V
h
h
I = -10mA
h
C
oe
CE
(continued)
ie
h
re
_
fe
20
= -10 V
V
T = 25 C
-20
CE
A
h
T - AMBIENT TEMPERATURE ( C)
oe
= -10 V
A
o
h
h
h
0
500
fe
ie
re
_
50
20
40
350
300
250
200
150
100
50
1.3
1.2
1.1
0.9
0.8
h
h
h
h
0
oe
re
fe
ie
1
0
(f = 1.0kHz)
-4
PNP General Purpose Amplifier
Common Emitter Characteristics
60
h
ie
o
25
80
Ambient Temperature
h
Power Dissipation vs
h
re
fe
V
and h
CE
-8
- COLLECTOR VOLTAGE (V)
100
TEMPERATURE ( C)
50
oe
75
-12
SOT-23
100
o
h
h
h
h
re
oe
ie
fe
-16
125
I = -10mA
T = 25 C
C
A
(continued)
o
150
-20