BCW68G Fairchild Semiconductor, BCW68G Datasheet - Page 4

• Manufacturer Part Number: BCW68G
• Description: TRANSISTOR PNP 45V 800MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BCW68G

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 30mA, 300mA
• Current - Collector Cutoff (max): 20nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 160
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
Typical Common Emitter Characteristics
50
20
10
5
2
1
0.5
0.2
0.1
10
5
2
1
_
1
t
Common Emitter Characteristics
30 ns
60 ns
r
and Turn On Base Currents
= 15 V
Rise Time vs Collector
I
_
C
2
I - COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
C
_
5
100
_
10
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
1
-40
Common Emitter Characteristics
V
h
h
I = -10mA
h
C
oe
CE
(continued)
ie
h
re
_
fe
20
= -10 V
V
T = 25 C
-20
CE
A
h
T - AMBIENT TEMPERATURE ( C)
oe
= -10 V
A
o
h
h
h
0
500
fe
ie
re
_
50
20
40
350
300
250
200
150
100
50
1.3
1.2
1.1
0.9
0.8
h
h
h
h
0
oe
re
fe
ie
1
0
(f = 1.0kHz)
-4
PNP General Purpose Amplifier
Common Emitter Characteristics
60
h
ie
o
25
80
Ambient Temperature
h
Power Dissipation vs
h
re
fe
V
and h
CE
-8
- COLLECTOR VOLTAGE (V)
100
TEMPERATURE ( C)
50
oe
75
-12
SOT-23
100
o
h
h
h
h
re
oe
ie
fe
-16
125
I = -10mA
T = 25 C
C
A
(continued)
o
150
-20