MJD32CTF Fairchild Semiconductor, MJD32CTF Datasheet - Page 2

• Manufacturer Part Number: MJD32CTF
• Description: TRANSISTOR PNP 100V 3A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of MJD32CTF

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 3 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 15 W
• Maximum Operating Frequency: 3 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD32CTF; MJD32CTFTR

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1000
1000
100
100
0.1
10
10
1
-0.01
1
-0.01
1
-0.1
Figure 3. Collector Capacitance
Figure 1. DC current Gain
V
Figure 5. Turn Off Time
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
-0.1
-0.1
-1
t
F
, V
t
F
, V
CC
CC
(off)=-10V
=-30V
t
STG
-10
-1
-1
V
I
C
CE
= 10.I
= -2V
B
-10
-100
-10
Figure 2. Base-Emitter Saturation Voltage
-0.01
-0.01
0.1
-0.1
-0.1
-10
-10
1
-0.01
-1
-1
-1E-3
-1
I
I
CP
C
(max)
(max)
Figure 6. Safe Operating Area
Collector-Emitter Saturation Voltage
V
CE
Figure 4. Turn On Time
[V], COLLECTOR-EMITTER VOLTAGE
-0.01
I
I
C
C
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
-0.1
V
-10
BE
(sat)
V
CE
t
R
(sat)
, V
-0.1
CC
=-10V
t
R
t
D
, V
, V
CC
BE
-1
-100
=-30V
(off)=-2V
-1
I
C
I
C
= 10.I
= 10 I
B
Rev. A2, June 2001
B
-10
-1000
-10