MJD32CTF Fairchild Semiconductor, MJD32CTF Datasheet - Page 3

• Manufacturer Part Number: MJD32CTF
• Description: TRANSISTOR PNP 100V 3A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of MJD32CTF

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 3 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 15 W
• Maximum Operating Frequency: 3 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD32CTF; MJD32CTFTR

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
20
15
10
5
0
0
25
Figure 7. Power Derating
T
50
C
[
o
C], CASE TEMPERATURE
75
100
125
(Continued)
150
175
Rev. A2, June 2001