KSB1151YS Fairchild Semiconductor, KSB1151YS Datasheet

TRANSISTOR PNP 60V 5A TO-126

KSB1151YS

Manufacturer Part Number
KSB1151YS
Description
TRANSISTOR PNP 60V 5A TO-126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSB1151YS

Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
300mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 2A, 1V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
TO-126-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 7 V
Maximum Dc Collector Current
5 A
Power Dissipation
1300 mW
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSB1151YSTSTU
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
KSB1151YSTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
KSB1151YSTU
Quantity:
10 720
©2003 Fairchild Semiconductor Corporation
Feature
• Low Collector-Emitter Saturation Voltage
• Large Collector Current
• High Power Dissipation : P
• Complement to KSD 1691
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse test: PW 350 s, Duty Cycle 2% Pulsed
h
h
h
V
V
V
I
I
I
P
T
T
I
I
h
V
V
t
t
t
FE
Symbol
C
CP
B
CBO
EBO
ON
STG
F
FE2
FE3
FE1
J
STG
CBO
CEO
EBO
C
CE
BE
(sat)
(sat)
Symbol
Classification
Classification
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
h
Collector Cut-off Current
Emitter Cut-off Current
Turn On Time
Storage Time
Fall Time
FE2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
=1.3W (T
a
=25 C)
T
C
100 ~ 200
=25 C unless otherwise noted
T
a
C
C
=25 C)
O
Parameter
=25 C)
=25 C unless otherwise noted
KSB1151
V
V
V
I
V
I
RL = 5
V
V
I
C
C
B1
CB
EB
CE
CE
CE
CC
= - 2A, I
= - 2A, I
= - I
= - 50V, I
= - 7V, I
= - 1V, I
= - 1V, I
= - 2V, I
= - 10V, I
Test Condition
B2
=0.2A
B
B
C
= - 0.2A
= - 0.2A
C
C
C
E
160 ~ 320
C
= 0
= - 0.1A
= - 2A
= - 5A
= 0
= - 2A
Y
1
1. Emitter
Min.
100
60
50
- 55 ~ 150
Value
- 60
- 60
150
1.3
20
- 7
- 5
- 8
- 1
2.Collector
- 0.14
Typ.
- 0.9
0.15
0.78
0.18
200
200 ~ 400
TO-126
G
Max.
- 0.3
- 1.2
- 10
- 10
400
2.5
3.Base
1
1
Units
W
W
V
V
V
A
A
A
C
C
Rev. B, May 2003
Units
V
V
A
A
s
s
s

Related parts for KSB1151YS

KSB1151YS Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE t Turn On Time ON t Storage Time STG t Fall Time F * Pulse test: PW 350 s, Duty Cycle 2% Pulsed h Classification FE Classification h FE2 ©2003 Fairchild Semiconductor Corporation KSB1151 = =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition 50V ...

Page 2

... Figure 1. Static Characteristic -10 V (sat -0.1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage - -20 -40 -60 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation -1000 -100 I = -20mA B - -10mA -0.01 -1.2 -1.6 -2.0 - -0.1 ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2003 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. B, May 2003 ...

Page 4

... Package Dimensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2003 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. B, May 2003 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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