KSB1151YS Fairchild Semiconductor, KSB1151YS Datasheet - Page 3

TRANSISTOR PNP 60V 5A TO-126

KSB1151YS

Manufacturer Part Number
KSB1151YS
Description
TRANSISTOR PNP 60V 5A TO-126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSB1151YS

Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
300mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 2A, 1V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
TO-126-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 7 V
Maximum Dc Collector Current
5 A
Power Dissipation
1300 mW
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSB1151YSTSTU
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
KSB1151YSTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
KSB1151YSTU
Quantity:
10 720
©2003 Fairchild Semiconductor Corporation
Typical Characteristics
30
25
20
15
10
5
0
25
Figure 7. Power Derating
T
50
C
[
o
C], CASE TEMPERATURE
75
100
125
(Continued)
150
175
Rev. B, May 2003

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