FZT853TA Diodes Zetex, FZT853TA Datasheet

FZT853TA

Manufacturer Part Number

FZT853TA

Description

TRANS NPN 100V 6000MA SOT-223

Manufacturer

Diodes Zetex

Datasheet

1.FZT853TA.pdf (3 pages)

Specifications of FZT853TA

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

340mV @ 500mA, 5A

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 2A, 2V

Power - Max

Frequency - Transition

130MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

100V

Collector-base Voltage(max)

200V

Emitter-base Voltage (max)

Collector Current (dc) (max)

Dc Current Gain (min)

100

Power Dissipation

Frequency (max)

130MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Compliant

Other names

FZT853TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZT853TA

Manufacturer:

ZETEX

Quantity:

2 000

Company:

HardFindElectronics Ltd

Part Number:

FZT853TA

Manufacturer:

DIODES

Quantity:

180

Company:

Meier Automation Equipment Co., Limited

Part Number:

FZT853TA

Manufacturer:

ZETEX

Quantity:

20 000

Current page: 1 of 3
Download datasheet (59Kb)

SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTORS

ISSUE 2 - OCTOBER 1995

FEATURES

PARTMARKING DETAILS -

COMPLEMENTARY TYPES - FZT851

ABSOLUTE MAXIMUM RATINGS.

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 square inch minimum

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

Operating and Storage Temperature

Range

Extremely low equivalent on-resistance; R

6 Amps continuous current, up to 20 Amps peak current

Very low saturation voltages

Excellent h

characteristics specified up to 10 Amps

amb

=25°C

DEVICE TYPE IN FULL

FZT853

FZT951

FZT953

SYMBOL

3 - 260

tot

CBO

CEO

EBO

CE(sat)

stg

44m at 5A

FZT851

150

-55 to +150

FZT853

200

100

FZT851

FZT853

UNIT

°C

Related parts for FZT853TA

FZT853TA Summary of contents

Page 1

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance Amps continuous current Amps peak current * Very low saturation voltages * Excellent h ...

Page 2

ELECTRICAL CHARACTERISTICS T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition ...

Page 3

FZT853 TYPICAL CHARACTERISTICS 0.8 0 0.2 0 0.01 0 Collector Current (Amps CE(sat) C 2 ...

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