FZT853TA Diodes Zetex, FZT853TA Datasheet - Page 2

• Manufacturer Part Number: FZT853TA
• Description: TRANS NPN 100V 6000MA SOT-223
• Manufacturer: Diodes Zetex

Specifications of FZT853TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 3W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage(max): 200V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 6A
• Dc Current Gain (min): 100
• Power Dissipation: 3W
• Frequency (max): 130MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant
• Other names: FZT853TR

ELECTRICAL CHARACTERISTICS T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
Switching Times
SYMBOL
V
V
V
V
I
I
R 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
200
200
100
6
100
100
50
20
3 - 263
= 25°C (atunless otherwise stated)
TYP.
300
300
120
8
14
100
200
200
100
30
130
35
50
1650
MAX. UNIT
10
1
10
1
10
50
150
340
1250
1100
300
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
T
V
V
T
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
B1
amb
amb
=100 A
CB
CB
CB
CB
EB
CB
=100 A
=10mA*
=0.1A, I
=2A, I
=5A, I
=5A, I
=10mA, V
=2A, V
=4A, V
=10A, V
=100mA, V
=1A, V
FZT853
=1 A, RB 1k
=5A, V
=I
=6V
=150V, T
=150V
=150V, T
=150V
=10V, f=1MHz
=100 °C
=100 °C
B2
=100mA,
B
B
B
CE
CE
CC
CE
=100mA*
=500mA*
=500mA*
B
CE
=2V*
=2V*
=2V*
=10V
=5mA*
=2V*
CE
amb
amb
CE
=2V
=10V
=25°C
=25°C