PMBTA06,235 NXP Semiconductors, PMBTA06,235 Datasheet - Page 3

• Manufacturer Part Number: PMBTA06,235
• Description: TRANS NPN 80V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBTA06,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 250mW
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 933776020235; PMBTA06 /T3; PMBTA06 /T3

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 22
R
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BE
NPN general purpose transistor
th(j-a)
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
E
C
C
C
C
C
C
= 0; V
= 0; V
= 10 mA; V
= 100 mA; V
= 100 mA; I
= 100 mA; V
= 10 mA; V
3
CB
EB
CONDITIONS
= 80 V
= 5 V
CE
CE
B
CE
CE
= 10 mA
= 1 V
= 2 V; f = 100 MHz 100
note 1
= 1 V
= 1 V
CONDITIONS
−
−
100
100
−
−
MIN.
VALUE
500
50
50
−
−
0.25
1.2
−
Product data sheet
MAX.
PMBTA06
UNIT
K/W
nA
nA
V
V
MHz
UNIT