PMBT4401,215 NXP Semiconductors, PMBT4401,215 Datasheet

TRANS NPN SW 600MA 40V SOT23

PMBT4401,215

Manufacturer Part Number
PMBT4401,215
Description
TRANS NPN SW 600MA 40V SOT23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PMBT4401,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
20
Frequency (max)
250MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
568-1743-2
933821810215
PMBT4401 T/R

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Product data sheet
Supersedes data of 1999 Apr 15
dbook, halfpage
DATA SHEET
PMBT4401
NPN switching transistor
DISCRETE SEMICONDUCTORS
M3D088
2004 Jan 21

Related parts for PMBT4401,215

PMBT4401,215 Summary of contents

Page 1

DATA SHEET dbook, halfpage PMBT4401 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS M3D088 2004 Jan 21 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Industrial and consumer switching applications. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT4403. MARKING TYPE NUMBER PMBT4401 Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th (j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors NPN switching transistor 300 handbook, full pagewidth h FE 200 100 0 −1 10 handbook, full pagewidth = 9 500 µ µ Ω 325 Ω 325 Ω −3 29 Ω. Oscilloscope: input impedance Z i 2004 Jan Fig.2 DC current gain; typical values (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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