MMBT2222A,215 NXP Semiconductors, MMBT2222A,215 Datasheet - Page 2

TRANS NPN 40V 600MA SOT23

MMBT2222A,215

Manufacturer Part Number
MMBT2222A,215
Description
TRANS NPN 40V 600MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBT2222A,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
250mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
250 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
75V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Frequency (max)
300MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4509-2
933545610215
MMBT2222A T/R
MMBT2222A T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT2222A,215
Manufacturer:
NXP
Quantity:
12 000
NXP Semiconductors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT2907A.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
MMBT2222A
MMBT2222A
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
NUMBER
SYMBOL
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
7C*
(1)
2
DESCRIPTION
open emitter
open base
open collector
T
PINNING
handbook, halfpage
amb
PACKAGE
≤ 25 °C; note 1
Fig.1 Simplified outline (SOT23) and symbol.
Top view
CONDITIONS
PIN
1
2
3
1
3
base
emitter
collector
2
−65
−65
MIN.
MAM255
MMBT2222A
DESCRIPTION
Product data sheet
1
75
40
6
600
800
200
250
+150
150
+150
MAX.
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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