BC859BW,115 NXP Semiconductors, BC859BW,115 Datasheet - Page 2

• Manufacturer Part Number: BC859BW,115
• Description: TRANSISTOR PNP 30V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC859BW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 220
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 30 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934024310115; BC859BW T/R; BC859BW T/R

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
BC859W
BC859BW
BC859CW
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
other audio-frequency equipment.
NUMBER
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
∗ = t : Made in Malaysia.
TYPE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
MARKING
BC859W
BC860W
BC859W
BC860W
CODE
4D∗
4B∗
4C∗
PARAMETER
BC860W
BC860BW
BC860CW
NUMBER
TYPE
MARKING
CODE
open emitter
open base
open collector
T
4H∗
4G∗
4F∗
amb
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Fig.1 Simplified outline (SOT323) and symbol.
PIN
1
2
3
Top view
1
base
emitter
collector
3
−
−
−
−
−
−
−
−
−
−65
−
−65
BC859W; BC860W
MIN.
2
DESCRIPTION
MAM048
−30
−50
−30
−45
−5
−100
−200
−200
200
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT