BCX71J,215 NXP Semiconductors, BCX71J,215 Datasheet - Page 4
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BCX71J,215
Manufacturer Part Number
BCX71J,215
Description
TRANSISTOR PNP 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BCX71K215.pdf
(7 pages)
Specifications of BCX71J,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933483670215::BCX71J T/R::BCX71J T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCX71J,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Feb 16
I
I
h
V
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BE
PNP general purpose transistors
c
e
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
p
BCX71H
BCX71J
BCX71K
BCX71H
BCX71J
BCX71K
BCX71H
BCX71J
BCX71K
≤ 300 μs; δ ≤ 0.02.
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
= 0; V
= 0; V
= I
= 0; V
= −10 μA; V
= −2 mA; V
= −50 mA; V
= −10 mA; I
= −50 mA; I
= −10 mA; I
= −50 mA; I
= −2 mA; V
= −10 μA; V
= −50 mA; V
= I
= −10 mA; V
= −200 μA; V
e
c
= 0; V
= 0; V
CB
CB
EB
= −45 V
= −45 V; T
= −4 V
CONDITIONS
4
CB
EB
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
= −0.5 V; f = 1 MHz
= −10 V; f = 1 MHz
CE
= −0.25 mA
= −1.25 mA; note 1
= −0.25 mA
= −1.25 mA; note 1
= −5 V
= −5 V
= −5 V
= −5 V
= −1 V; note 1
= −1 V; note 1
= −5 V; f = 100 MHz 100
= −5 V; R
amb
= 150 °C
S
= 2 kΩ;
−
−
−
30
40
100
180
250
380
80
100
110
−60
−120
−600
−680
−600
−
−
−
−
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−650
−550
−720
4.5
11
−
2
BCX71 series
TYP.
Product data sheet
−20
−20
−20
−
−
−
310
460
630
−
−
−
−250
−550
−850
−1 050 mV
−750
−
−
−
−
−
6
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
UNIT