PMST3906,115 NXP Semiconductors, PMST3906,115 Datasheet - Page 4

• Manufacturer Part Number: PMST3906,115
• Description: TRANS PNP 40V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of PMST3906,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Transistor Type: PNP
• Frequency - Transition: 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 200 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934026930115::PMST3906 T/R::PMST3906 T/R

NXP Semiconductors
PMST3906_5
Product data sheet
Fig 1.
Fig 3.
(mV)
V
1200
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
BE
600
400
200
800
600
400
200
FE
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 1 V
= 1 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
C
C
(mA)
(mA)
mhc459
mhc461
10
10
Rev. 05 — 29 April 2009
3
3
Fig 2.
Fig 4.
V
(mV)
BEsat
(mA)
1200
1000
(1) T
(2) T
(3) T
I
800
600
400
200
250
200
150
100
C
50
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
amb
amb
amb
amb
/I
1
B
= 10
= 25 C
= 55 C
= 25 C
= 150 C
40 V, 200 mA PNP switching transistor
2
1
4
I
10
B
(1)
(2)
(3)
(mA) = 1.5
6
PMST3906
1.20
0.90
0.60
0.30
10
© NXP B.V. 2009. All rights reserved.
2
8
I
006aab475
C
V
(mA)
CE
mhc462
1.35
1.05
0.75
0.45
0.15
(V)
10
10
3
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