BC860C,235 NXP Semiconductors, BC860C,235 Datasheet - Page 3
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BC860C,235
Manufacturer Part Number
BC860C,235
Description
TRANSISTOR PNP 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC860C215.pdf
(8 pages)
Specifications of BC860C,235
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933628700235
BC860C /T3
BC860C /T3
BC860C /T3
BC860C /T3
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BC859
BC860
BC859
BC860
PARAMETER
PARAMETER
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
3
CONDITIONS
note 1
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
BC859; BC860
500
−30
−50
−30
−45
−5
−100
−200
−200
250
+150
150
+150
MAX.
Product data sheet
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
K/W
UNIT